tc74ac125p/f/ft,126p/f 2012-02-29 1 toshiba cmos digital integrat ed ci rcuit silicon monolithic tc74ac125p,tc74ac125f,tc74ac125ft tc74ac126p,tc74ac126f tc74ac125p/f/ft quad bus buffer tc74ac126p/f quad bus buffer the tc74ac125/126 are advanced high speed cmos quad bus buffers fabricated with s ilicon gate and double-layer metal wiring c 2 mos technology. they achieve the high speed op eration similar to equivalent bipolar schottky ttl while main taining the cmos low power dissipation. the tc74ac125 requires the 3-state control input g to be set high to place the output into th e high impedance state, whereas the tc74ac126 requires the control input to be set low to place the output into high impedance. all inputs are equipped with prot ection circuits against static discharge or transi ent excess voltage. features ? high speed: t pd = 4.0 ns (typ.) at v cc = 5 v ? low power dissipation: i cc = 8 a (max) at ta = 25c ? high noise immunity: v nih = v nil = 28% v cc (min) ? symmetrical output impedance: |i oh | = i ol = 24 ma (min) capability of driving 50 ? transmission lines. ? balanced propagation delays: t plh ? t phl ? wide operating voltage range: v cc (opr) = 2 to 5.5 v ? pin and function compatible with 74f125/126 tc74ac125p, tc74ac126p tc74ac125f, tc74ac126f tc74ac125ft weight dip14-p-300-2.54 : 0.96 g (typ.) sop14-p-300-1.27a : 0.18 g (typ.) tssop14-p-0044-0.65a : 0.06 g (typ.)
tc74ac125p/f/ft,126p/f 2012-02-29 2 pin assignment iec logic symbol truth table tc74ac125 inputs output g a y h x z l l l l h h x: don?t care z: high impedance tc74ac126 inputs output g a y l x z h l l h h h x: don?t care z: high impedance v cc 9 4a 4y 8 14 13 12 11 10 g 1 1 2 3 4 5 6 7 2a 2y gnd 3a 3y (top view) 1a tc74ac125 g2 g 4 g3 1y v cc 9 4a 4y 8 14 12 11 10 1 2 3 4 5 6 7 2a 2y gnd 3a 3y (top view) 1a 1y tc74ac126 13 1g 2g 4g 3g (4) (10) (5) g2 en g3 2a (13) (9) (12) g4 3a (6) (8) (11) 2y 3y 4y 4a (1) (2) g1 1a (3) 1y tc74ac125 (4) (10) (5) en 2a (13) (9) (12) 3a (6) (8) (11) 2y 3y 4y 4a (1) (2) 1a (3) 1y tc74ac126 1g 2g 3g 4g
tc74ac125p/f/ft,126p/f 2012-02-29 3 absolute maximum ratings (note 1) characteristics symbol rating unit supply voltage range v cc ? 0.5 to 7.0 v dc input voltage v in ? 0.5 to v cc + 0.5 v dc output voltage v out ? 0.5 to v cc + 0.5 v input diode current i ik 20 ma output diode current i ok 50 ma dc output current i out 50 ma dc v cc /ground current i cc 100 ma power dissipation p d 500 (dip) (note 2)/180 (sop/tssop) mw storage temperature t stg ? 65 to 150 c note 1: exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in ic performance or even destruction. using continuously under heavy loads (e.g. the app lication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 2: 500 mw in the range of ta = ? 40 to 65c. from ta = 65 to 85c a derating factor of ? 10 mw/c should be applied up to 300 mw. operating ranges (note) characteristics symbol rating unit supply voltage v cc 2.0 to 5.5 v input voltage v in 0 to v cc v output voltage v out 0 to v cc v operating temperature t opr ? 40 to 85 c input rise and fall time dt/dv 0 to 100 (v cc = 3.3 0.3 v) 0 to 20 (v cc = 5 0.5 v) ns/v note: the operating ranges must be maintained to ensure the normal oper ation of the device. unused inputs must be tied to either vcc or gnd.
tc74ac125p/f/ft,126p/f 2012-02-29 4 electrical characteristics dc characteristics test condition ta = 25c ta = ? 40 to 85c characteristics symbol v cc (v) min typ. max min max unit high-level input voltage v ih D 2.0 3.0 5.5 1.50 2.10 3.85 D D D D D D 1.50 2.10 3.85 D D D v low-level input voltage v il D 2.0 3.0 5.5 D D D D D D 0.50 0.90 1.65 D D D 0.50 0.90 1.65 v i oh = ? 50 a 2.0 3.0 4.5 1.9 2.9 4.4 2.0 3.0 4.5 D D D 1.9 2.9 4.4 D D D high-level output voltage v oh v ih or v il i oh = ? 4 ma i oh = ? 24 ma i oh = ? 75 ma (note) 3.0 4.5 5.5 2.58 3.94 D D D D D D D 2.48 3.80 3.85 D D D v i ol = 50 a 2.0 3.0 4.5 D D D 0.0 0.0 0.0 0.1 0.1 0.1 D D D 0.1 0.1 0.1 low-level output voltage v ol v ih or v il i ol = 12 ma i ol = 24 ma i ol = 75 ma (note) 3.0 4.5 5.5 D D D D D D 0.36 0.36 D D D D 0.44 0.44 1.65 v 3-state output off-state current i oz v in = v ih or v il v out = v cc or gnd 5.5 D D 0.5 D 5.0 a input leakage current i in v in = v cc or gnd 5.5 D D 0.1 D 1.0 a quiescent supply current i cc v in = v cc or gnd 5.5 D D 8.0 D 80.0 a note: this spec indicates the capability of driving 50 ? transmission lines. one output should be tested at a ti me for a 10 ms maximum duration.
tc74ac125p/f/ft,126p/f 2012-02-29 5 ac characteristics (c l = 50 pf, r l = 500 ?, input: t r = t f = 3 ns) test condition ta = 25c ta = 40 to 85c characteristics symbol v cc (v) min typ. max min max unit propagation delay time t plh t phl ? 3.3 0.3 5.0 0.5 ? ? 6.4 4.7 10.5 7.0 1.0 1.0 12.0 8.0 ns output enable time t pzl t pzh ? 3.3 0.3 5.0 0.5 ? ? 7.1 5.0 12.3 7.9 1.0 1.0 14.0 9.0 ns output disable time t plz t phz ? 3.3 0.3 5.0 0.5 ? ? 5.1 4.6 8.8 6.6 1.0 1.0 10.0 7.5 ns input capacitance c in ? ? 5 10 ? 10 pf output capacitance c out ? ? 10 ? ? ? pf power dissipation capacitance c pd (note) ? 24 ? ? ? pf note: c pd is defined as the value of the internal equivalent capacitance which is ca lculated from the operating current consumption without load. average operating current can be obtained by the equation: i cc (opr) = c pd v cc f in + i cc /4 (per gate)
tc74ac125p/f/ft,126p/f 2012-02-29 6 package dimensions weight: 0.96 g (typ.)
tc74ac125p/f/ft,126p/f 2012-02-29 7 package dimensions weight: 0.18 g (typ.)
tc74ac125p/f/ft,126p/f 2012-02-29 8 package dimensions weight: 0.06 g (typ.)
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